JEOL USA is holding a series of electron microscopy seminars and you are invited to our next event.

Please join JEOL USA, Inc., Oxford Instruments, and the NCF (Nanomaterials Characterization Facility at the University of Colorado) for a special symposium, "New Frontiers in Electron Microscopy" to be held at the Discovery Learning Center at the University of Colorado on October 20th.

New Frontiers in Electron Microscopy

Tuesday, October 20th, 2009 
University of Colorado
Discovery Learning Center, Room 1B70
Boulder, Colorado

9:30-10:00 a.m.   Welcome and Registration
Juice and Coffee will be available
 
10:00-10:30 a.m.  Recent Advances in Low kV Backscatter Imaging and Low kV Microanalysis
Mr. Vernon Robertson, JEOL USA, Inc.
Advances in electron optics and spectrometers offer dramatic improvements in overcoming the fundamental limitations of achieving good low kv imaging and microanalysis.  Advances in hardware and software will be discussed along with applications related examples.
 
10:30-11:00 a.m.  3D Volume Averaging of Isolated Cytoskeletons of Giardia Intestinalis
Dr. Cindi Schwartz,University of Colorado
Cryo-tomography coupled with 3D volume averaging reveals new structures associated with the attachment organ of Giardia, the ventral disc. These microtubule-associated structures are novel and may become drug targets against Giardia infection.
 
11:00-11:15 a.m.  Coffee Break
 
11:15-11:45 a.m.  Large Area, High Resolution Silicon Drift Detectors:  
Revolutionizing EDS Performance and Capability 
Mr. Scott Sitzman,Oxford Instruments
The recent introduction of very large active area silicon drift detectors (SDDs) is significantly expanding the capability and applicability of the traditional EDS technique.  SDDs inherently allow high count rates, greatly reducing the time necessary to collect conventional EDS maps and enhancing the quality of data for rich, high signal-to-noise datasets.  At the same time, new technology allows large area detectors, including those with 80mm2 active areas, to achieve resolutions as high as 123 eV @ Mn Ka, as well as yield excellent performance on light elements.  Thus, compromising resolution and other aspects of performance is no longer necessary when working with very large area detectors, making these liquid nitrogen-free detectors now the design of choice for all applications.  

11:45-12:15 p.m.  The World through Rose Colored Lenses
Dr. Jaap Brink JEOL USA
Few electron optical inventions have revolutionized the TEM/STEM as profoundly as the Cs corrector.  Atomic level mapping, resolution better than 50 picometers...we can now look an atom in the eye, ask it a question, and get a straight answer. The field of electron microscopy never looked more promising. Please join our symposium for a concise review of the future.
 
12:15-1:00 p.m. Lunch Will Be Provided
 
1:00-1:30 p.m.   Cross Correlative STEM-HAADF and Atom Probe Tomography
Dr. Brian Gorman, The Colorado School of Mines
The combination of Z-contrast STEM and atom probe tomography allows for characterization of materials at near atomic scale chemical and spatial resolution.  This talk will illustrate recent developments in techniques and  hardware for cross-correlative analysis on a single specimen array.  Applications to radiation tolerance in nanostructured alloys will be demonstrated.
 
1:30-2:00 p.m.  Sample Preparation Using CP Polisher/Cross Sectioning of Cryomilled Nanostructures
Mr. Vern Robertson, JEOL USA 
Using an argon ion beam, a unique cross section polishing technique prepares soft, hard, and composite materials with virtually no sample damage, smearing, or deformation. This includes difficult-to-polish soft materials such as copper, aluminum, gold, solder, paper products, and polymers, as well as difficult-to-cut materials such as ceramic and glass. We will present this new specimen preparation method and examples of results of a variety of materials.
  
2:00-2:30 p.m.  Beyond Imaging and Chemistry:  
Characterizing the Microstructure of Materials with EBSD
Mr. Scott Sitzman, Oxford Instruments
Electron BackScatter Diffraction (EBSD) involves the automated collection and analysis of these patterns, and patterns from surrounding areas of the sample, for a huge variety of modes of characterization, including:  Crystallographic phase identification, crystallographic orientation determination, determination of preferred orientation, grain size analysis, grain shape analysis, grain boundary characterization, analysis of strain, crystallographically determined phase area % and distribution, and orientation relationship determinations between different phases.  Modern EBSD systems allow automated pattern collection and indexing rates exceeding 670 per second, so EBSD analysis of relatively large areas may be collected in greatly reduced times, and high sensitivity detectors enable high spatial resolution analysis of nanocrystalline materials and structures.  EBSD is rapidly becoming a standard analytical accessory on the modern SEM.  
 
2:30 p.m. Tour of the NCF at The University of Colorado
 
 RSVP is required to Chris Rood by October 9th.  Space is limited.  
Contact 
Chris Rood, crood@jeol.com, 760-476-1980.